APD module
s
Absolute maximum ratings
Parameter
Positive supply voltage
Positive supply voltage
Negative supply voltage
Input power
Operating temperature
Storage temperature
Operating/storage humidity
Symbol
-
-
-
-
Topr
Tstg
-
Condition
Value
+7
+16
-16
10
10 to 40
-10 to +60
70 % RH below
C4777 series
Unit
V
V
V
mW
°C
°C
-
No condensation
s
Specification (Typ. Ta=25
°C,
Vcc=+5 V, +15 V, unless otherwise noted)
q
Photoelectric section (APD)
Parameter
Active area
Peak sensitivity wavelength
Spectral response range
Photo sensitivity
Gain
Thermoelectric cooler
Cooling temperature
Temperature stability of gain
Symbol
A
λp
λ
S
M
-
-
-
Condition
C4777
φ0.5
C4777-01
φ3.0
800
400 to 1000
0.5
100
One-stage
0
±3
50
Two-stage
Unit
mm
nm
nm
A/W
times
-
°C
%
λ=800
nm, M=1
λ=800
nm
Ta=10 to 40 °C
q
Signal amplification section
C4777
Parameter
High band
C ut-off frequency
Low band
Noise equivalent power
Feedback resistance
Photoelectric sensitivity
Output impedance
Maximum input light level
Minimum detection limit
Symbol
fc
NEP
Rf
-
-
-
-
-3 dB
λ=800
nm
APD include, M=100
λ=800
nm
Condition
Min.
95
-
-
-
-2.0
-
0.6
-
Typ.
100
10
80
10
-2.5
50
0.8
0.80
Max.
-
15
120
-
-3.0
-
-
1.20
Unit
MHz
kHz
1/2
fW/Hz
kΩ
× 10
5
V /W
Ω
µW
nWr.m.s.
C4777-01
Parameter
High band
C ut-off frequency
Low band
Noise equivalent power
Feedback resistance
Photoelectric sensitivity
Maximum input light level
Minimum detection limit
Symbol
fc
NEP
Rf
-
-
-
-3 dB
λ=800
nm
APD include, M=50
λ=800
nm
Condition
Min.
4
-
-
-
-1.0
8.8
-
Typ.
5
DC
2
50
-1.25
9.6
0.14
Max.
-
-
4
-
-1.5
-
0.28
Unit
kHz
-
1/2
fW/Hz
M
Ω
× 10
9
V /W
nW
pWr.m.s.
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
