星合电子
XINGHE ELECTRONICS
1N5926B THRU 1N5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
ZZ, DYNAMIC IMPEDANCE (OHMS)
200
VZ@IZT
1K
500
200
100
50
20
10
5
2
1
0.5
1
2
5
10
20
£c
VZ, TEMPERATURE
COEFFICIENT(mV/¢J )
TJ - 25
¢J
IZ(ms) = 0.1 IZ(dc)
VZ = 150V
91V
62V
100
70
50
30
20
22V
12V
6.8V
50
100
200
500
10
10
20
30
50
70
100
200
VZ, ZENER VOLTAGE (VOLTS)
IZ, ZENER TEST CURRENT (mA)
Fig. 3-ZENER VOLTAGE-10 TO 200 VOLTS
Fig. 4-EFFECT OF ZENER CURRENT
1K
ZZ, DYNAMIC IMPEDANCE (OHMS)
200
IZ (dc) = 1mA
100
70
50
30
20
10mA
10
7
5
3
2
5
20mA
7
10
20
IZ (ms) = 0.1 IZ (dc)
30
50
70
100
PPK, PEAK SURGE POWER
(WATTS)
500
300
200
100
50
30
20
10
.1
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25 PRIOR TO
¢J
INITIAL PULSE
.2 .3
5
1
2 3 5
10
20
50
100
VZ, ZENER VOLTAGE (VOLTS)
PW, PULSE WIDTH(ms)
100
100
IZ, ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2 3
4
5
6 7
8
9 10
IZ, ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
20 30 40
50 60
70 80 90
100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 7-VZ = 6.8 THRU 10 VOLTS
Fig. 8-VZ = 12 THRU 82 VOLTS
3
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