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GSD882S 参数 Datasheet PDF下载

GSD882S图片预览
型号: GSD882S
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 128 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GSD882S的Datasheet PDF文件第2页  
CORPORATION
GSD882S
Description
Package Dimensions
D
E
S1
ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
P N P E P I TA X I A L P L A N A R T R A N S I S TO R
The
GSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
40
30
5.0
3.0
750
V
V
V
A
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
FT
Cob
at Ta = 25 :
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
MHz
Pf
Unit
V
V
V
uA
uA
V
V
IC=100uA ,IE=0
IC=1mA,IB=0
IE=10uA
VCB=30V
VEB=3V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V,IE=0, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Test Conditions
Classification Of h
FE
2
Rank
Range
Q
100-200
P
160-320
E
250-500
1/2