ISSUED DATE :2006/01/18
REVISED DATE :
GSD2656
Description
Package Dimensions
NPN EPITAXIAL T RANSISTOR
The GSD2656 is designed for general purpose amplifier applications.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
30
30
6
1
225
Unit
:
:
V
V
V
A
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
*h
FE
*fT
Cob
Min.
30
30
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
400
5
, unless otherwise noted)
Max.
Unit
-
-
-
100
100
350
500
-
-
MHz
pF
V
V
V
nA
nA
mV
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=6V, I
C
=0
Test Conditions
I
C
=500mA, I
B
=25mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
E
=-100mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulsed Test
Classification Of h
FE
Rank
Range
EUC
120 ~ 200
EUD
160 ~ 300
EUE
250 ~ 500
GSD2656
Page: 1/2
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