ISSUED DATE :2005/02/23
REVISED DATE :2006/11/09C
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-30
-
-
V
BVDSS
Tj
VGS=0, ID=-250uA
Ϧ
BVDSS
/Ϧ
-
-0.037
-
V/к
V
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5.3A
VGS= ±16V
-1.0
-
10
-
-3.0
VGS(th)
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
±100
nA
uA
uA
IGSS
-
-1
-5
50
90
-
VDS=-30V, VGS=0
VDS=-24V, VGS=0
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
Static Drain-Source On-Resistance
mꢀ
RDS(ON)
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
28
3
Qg
Qgs
Qgd
Td(on)
Tr
ID=-5.3A
nC
-
VDS=-15V
VGS=-10V
7
-
9
-
VDS=-15V
ID=-1A
15
75
40
745
440
120
-
ns
VGS=-10V
Turn-off Delay Time
Fall Time
-
Td(off)
Tf
RG=6ꢀ
RD=15ꢀ
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
Ciss
Coss
Crss
VGS=0V
pF
-
VDS=-15V
f=1.0MHz
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
-1.2
-2.6
-20
Unit
V
Test Conditions
-
-0.75
VSD
IS=-2.6A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
-
-
A
IS
VD=VG=0V, VS=-1.2V
1
Pulsed Source Current (Body Diode
)
A
ISM
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
GSC9435
Page: 2/5
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