ISSUED DATE :2006/04/20
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
-30
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
-
14
-
-
-
16.5
30
23
4
16
13
10
48
46
1170
415
340
8
Max.
-
-
-3.0
-
±100
-1
-25
20
35
37
-
-
-
-
-
-
1870
-
-
12
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-9A
V
GS
=±25V
V
DS
=-30V, V
GS
=0
V
DS
=-24V, V
GS
=0
V
GS
=-10V, I
D
=-9A
V
GS
=-4.5V, I
D
=-6A
I
D
=-9A
V
DS
=-25V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
V
GS
=-10V
R
G
=3.3
R
D
=15
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
40
30
Max.
-1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=-2.1A, V
GS
=0V
I
S
=-9A, V
GS
=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board, t 10sec; 125 : /W when mounted on Min. copper pad.
GSC4835
Page: 2/4
GTM [ GTM CORPORATION ]
