ISSUED DATE :2006/10/27
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=55 : )
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
30
0.7
-
-
-
-
-
Typ.
-
-
16
-
-
-
-
-
-
9.7
1.63
3.1
3.3
4.7
26
4.1
857
97
71
Max.
-
1.4
-
±100
1
5
24
30
48
12
-
-
-
-
-
-
1050
-
-
Unit
V
V
S
nA
uA
uA
Test Conditions
V
GS
=0, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
GS
= ±12V
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=10V, I
D
=8.5A
Static Drain-Source On-Resistance
R
DS(ON)
-
-
m
V
GS
=4.5V, I
D
=8.5A
V
GS
=2.5V, I
D
=5.0A
I
D
=8.5A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
V
GS
=10V
R
G
=6
R
L
=1.8
V
GS
=0V
V
DS
=15V
f=1.0MHz
Total Gate Charge
2
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current (
Body Diode
)
Symbol
V
SD
I
S
T
rr
Q
rr
Min.
-
-
-
-
Typ.
-
-
15
8.6
Max.
1.0
4.3
-
-
Unit
V
A
ns
nC
Test Conditions
I
S
=1.0A, V
GS
=0V
V
D
= V
G
=0V, V
S
=1.0V
I
S
=5.0A, V
GS
=0V
dI/dt=100A/ s
Reverse Recovery Time
2
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 125 : /W when mounted on Min. copper pad.
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