ISSUED DATE :2004/09/24
REVISED DATE :
G S B AV 9 9 W
Description
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 8 5 V, C U R R E N T 0 . 1 5 A
Package Dimensions
The GSBAV99W is designed for ultra high speed switching.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
! :
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 1uSec
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time(Note 2)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RMS
V
DC
I
FSM
C
J
T
RR
Io
PD
Ratings
+150
-55 ~ +150
85
60
75
4.0
1.5
4.0
0.15
250
V
V
V
A
pF
nSec
A
mW
Unit
Characteristics
at Ta = 25 :
Symbol
V
F
IR
Typ.
1.25
1.0
Unit
V
uA
Test Condition
IF = 150mA
VR = 75V
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 5mA and reverse voltage of 10.0 volt.
3. ESD sensitive product handling required.
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GTM [ GTM CORPORATION ]
