CORPORATION
G SB AS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
ISSUED DATE :2006/12/12
REVISED DATE :
S U R F A C E M O U N T, S W I T C H I N G D I O D E
The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current (1ms)
Total Power Dissipation
Symbol
Tj
Tstg
V
R
V
RRM
I
O
I
FM
I
FSM
P
D
Ratings
+150
-65 ~ +150
85
85
250
500
1000
225
Unit
:
:
V
V
mA
mA
mA
mW
Electrical Characteristics
(at T
A
= 25 : unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
Symbol
V(
BR
)
V
F
(1)
Forward Voltage
V
F
(2)
V
F
(3)
V
F
(4)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
Trr
-
Min.
85
-
-
-
-
-
Max.
-
715
855
1000
1250
1
2
6
Unit
V
mV
mV
mV
mV
uA
pF
nS
I
R
=100uA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=85V
V
R
=0, f=1MHz
I
F
=I
R
=10mA, R
L
=100
measured at I
R
=1mA
Test Conditions
GSBAS16
Page: 1/2
GTM [ GTM CORPORATION ]
