G S B 11 3 2
The GSB1132 is a epitaxial
1/3
P N P E PI TA XI A L SI LI CO N T RA N SI STO R
Description
planar type PNP silicon transistor .
(I
C
/I
B
= -500mA / -50 mA)
Features
Low V
CE(sat)
. V
CE(sat)
= -0.2V(Typ.)
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
1.50
1.30
2.40
0.89
4.25
1.70
1.50
2.60
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
1.40
0.35
0.52
1.60
0.41
5 q TYP.
0.70 REF.
Unit
Absolute Maximum Ratings
(Ta = 25 : ,unless otherwise specified)
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
Collector Current(PULSE)
Collector Power Dissipation
(note1)
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55 ~ +150
-40
-32
-5
-1
-2
0.5
2
V
V
V
A
A
W
W
Collector Power Dissipation (note2)
P
D
Note 1:Single pulse, PW=100ms
Note 2: When mounted on a 40*40*0.7 mm ceramic board.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(
sat)
hFE
fT
Min.
-40
-32
-5
-
-
-
82
-
Typ.
-
-
-
-
-
-0.2
-
150
20
Electrical Characteristics
(Ta = 25 : ,unless otherwise specified)
Max.
-
-
-
-0.5
-0.5
-0.5
390
-
30
MHz
pF
Unit
V
V
V
uA
uA
V
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-20V
VEB=-4V
IC=-500mA, IB=-50mA(note)
VCE=-3V, IC=-100mA
VCE=-5V, IE=-50mA, f=30MHz
VCE=-10V, IE=0A, f=1MHz
Test Conditions
Cob
-
Note: Measured using pulse current.
Classification Of hFE
Rank
RANGE
P
Q
120 - 270
R
180 - 390
82 - 180
GTM [ GTM CORPORATION ]
