CORPORATION
G S A1015
Description
Features
P NP E PITAX I AL P L ANAR TANSI STOR
The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications.
ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
*Collector-Base Voltage: V
CBO
=-50V
*Complementary to GSC1815
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Symbol
Ratings
Unit
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
+150
-55 ~ +150
-50
-50
-5
-150
-50
400
Max.
Unit
Test Conditions
V
V
V
mA
mA
mW
Characteristics
Symbol
at Ta = 25 :
Min.
Typ.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)
*V
BE
(sat)
hFE1
hFE2
fT
Cob
-50
-50
-5
-
-
-
-
70
25
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-100
-100
-0.3
-1.1
700
-
-
7.0
V
V
V
nA
nA
V
V
MHz
pF
I
C
=-100uA , I
E
= 0
I
C
=-1mA, I
B
= 0
I
E
=-10uA, I
C
= 0
V
CE
=-50V, I
E
= 0
V
EB
=-5V, I
C
= 0
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-2mA
V
CE
=-6V, I
C
=-150mA
V
CE
=-10V, I
C
=-1mA, f=100MHz
V
CB
=-10V, I
E
= 0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle
2%
Classification OF hFE1
Rank
Range
O
70-140
Y
120-240
GR
200-400
L
350-700
1/2
GTM [ GTM CORPORATION ]
