ISSUED DATE :2005/09/19
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
60
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
600
-
-
-
-
-
1
0.5
0.5
12
10
56
29
32
8
6
Max.
-
-
3.0
-
D
10
1
100
2
4
1.6
-
-
-
-
-
-
50
-
-
pF
ns
nC
Unit
V
V/ :
V
mS
uA
uA
uA
Ł
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=600mA
20V
V
GS
= D
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0
V
GS
=10V, I
D
=500mA
V
GS
=4.5V, I
D
=200mA
I
D
=600mA
V
DS
=50V
V
GS
=4.5V
V
DS
=30V
I
D
=600mA
V
GS
=10V
R
G
=3.3 Ł
R
D
=52 Ł
V
GS
=0V
V
DS
=25V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Symbol
V
SD
Source-Drain Diode
Parameter
Forward On Voltage
2
Min.
-
Typ.
-
Max.
1.2
Unit
V
Test Conditions
I
S
=200mA, V
GS
=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
GS2N7002K
Page: 2/4
GTM [ GTM CORPORATION ]
