Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
GS1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
600m
600mA
The GS1332E provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
*Simple Gate Drive
*Small Package Outline
*2KV ESD Rating (Per MIL-STD-883D)
Description
Features
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
1,2
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Operating Junction and Storage Temperature Range
Ratings
20
±5
600
470
2.5
0.35
0.003
-55 ~ +150
Value
360
Unit
V
V
mA
mA
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient
Max.
GS1332E
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GTM [ GTM CORPORATION ]
