ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
40
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.032
-
25
-
-
-
-
-
14.7
7.1
6.8
11.5
6.3
28.2
12.6
1725
235
145
Max.
-
-
3.0
-
D
100
1
25
25
40
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
Unit
V
V/ :
V
S
nA
uA
uA
mŁ
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
20V
V
GS
= D
V
DS
=40V, V
GS
=0
V
DS
=32V, V
GS
=0
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
I
D
=7A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=1A
V
GS
=10V
R
G
=3.3 Ł
R
D
=20 Ł
V
GS
=0V
V
DS
=25V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
I
S
Min.
-
-
Typ.
-
-
Max.
1.3
1.54
Unit
V
A
Test Conditions
I
S
=2.3A, V
GS
=0V
V
D
=V
G
=0V, V
S
=1.3V
Continuous Source Current (
Body Diode
)
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on 1 in
2
copper pad of FR4 board; 90 : /W when mounted on Min. copper pad.
2/4
GTM [ GTM CORPORATION ]
