ISSUED DATE :2005/11/14
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
-40
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.03
-
10
-
-
-
-
-
19
5
8
12
7
68
38
1600
240
190
Max.
-
-
-3.0
-
±100
-1
-25
40
60
30
-
-
-
-
-
-
2560
-
-
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5.5A
V
GS
= ±25V
V
DS
=-40V, V
GS
=0
V
DS
=-32V, V
GS
=0
V
GS
=-10V, I
D
=-5.5A
V
GS
=-4.5V, I
D
=-4A
I
D
=-6A
V
DS
=-32V
V
GS
=-4.5V
V
DS
=-20V
I
D
=-1A
V
GS
=-10V
R
G
=3.3
R
D
=20
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
37
54
Max.
-1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=-2A, V
GS
=0V
I
S
=-6A, V
GS
=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on 1 in
2
copper pad of FR4 board; 90 : /W when mounted on Min. copper pad.
GP5936
Page: 2/4
GTM [ GTM CORPORATION ]
