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GMSD1664 参数 Datasheet PDF下载

GMSD1664图片预览
型号: GMSD1664
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 191 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMSD1664的Datasheet PDF文件第2页  
CORPORATION
GMSD1664
Description
Package Dimensions
SOT-89
The GMSD1664 is designed for general purpose amplifier applications.
ISSUED DATE :2005/03/04
REVISED DATE :
NP N E PITAX IAL PL ANAR T RANS ISTO R
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Unit
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
40
32
5
1
500
V
V
V
A
mW
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
h
FE
fT
Cob
at Ta = 25 :
Min.
40
32
5
-
-
-
82
-
-
Typ.
-
-
-
-
-
0.15
-
150
9
Max.
-
-
-
500
500
0.4
390
-
-
MHz
pF
Unit
V
V
V
nA
nA
V
I
C
=50uA
I
C
=1mA
I
E
=50uA
V
CE
=20V
V
EB
=4V
I
C
=500mA, I
B
=50mA
V
CE
=3V, I
C
=100mA
V
CE
=5V, I
E
=-50mA, f=100MHz
V
CB
=10V, I
E
=0mA, f=1MHz
Test Conditions
Classification Of h
FE
Rank
h
FE
P
82-180
Q
120-270
R
180-390
1/2