ISSUED DATE :2006/10/13
REVISED DATE :
G M P S A9 4 S
Description
Features
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GMPSA94S is designed for application that requires high voltage.
*High Breakdown Voltage:-400(Min) at IC=-1mA
*High current Gain: I
C
=-300mA at 25 :
*Complementary to GMPSA44S
Package Dimensions
D
E
S1
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
, unless otherwise specified)
Symbol
Ratings
V
CBO
-400
V
CEO
-400
V
EBO
-6
I
C
-300
Tj
+150
Ts
TG
-55 ~ +150
P
D
625
Unit
V
V
V
mA
mW
Electrical Characteristics
Symbol
Min.
(Ta = 25 : , unless otherwise specified)
Max.
Unit
Test Conditions
Typ.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
1
V
CE(sat)
2
V
CE(sat)
3
V
BE(sat)
h
FE
1
h
FE
2
h
FE
3
h
FE
4
-400
-400
-6
-
-
-
-
-
-
-
40
50
45
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N
50-300
-
-
-
-
-
-100
-100
-500
-350
-500
-750
-750
-
300
-
-
NS
70-300
-
>50
V
V
V
nA
nA
nA
mV
mV
mV
mV
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-400V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-400V, V
BE
=0
I
C
=-1mA, I
B
=-0.1mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-50mA
V
CE
=-10V, I
C
=-100mA
SD
70-210
<200mV
-
SUM
120-300
-
-
Classification of h
FE
2
Rank
Range
V
CE(sat)
2:I
C
=-10mA, I
B
=-1mA
h
FE
: V
CE
=3V, I
C
=100mA
GMPSA94S
Page: 1/2
GTM [ GTM CORPORATION ]
