ISSUED DATE :2006/10/13
REVISED DATE :
G M P S A4 4 S
Description
Features
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The GMPSA44S is designed for application that requires high voltage.
*High Breakdown Voltage: 400(Min) at I
C
=1mA
*High current Gain: I
C
=300mA at 25 :
*Complementary to GMPSA94S
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
Symbol
Ratings
V
CBO
500
V
CEO
400
V
EBO
6
I
C
300
Tj
+150
Ts
TG
-55 ~ +150
P
D
625
Unit
V
V
V
mA
mW
Electrical Characteristics
Symbol
Min.
(Ta = 25 : , unless otherwise specified)
Max.
Unit
Test Conditions
Typ.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
1
V
CE(sat)
2
V
CE(sat)
3
V
BE(sat)
h
FE
1
h
FE
2
h
FE
3
h
FE
4
Cob
500
400
6
-
-
-
-
-
-
-
40
50
45
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
-
-
-
100
100
500
350
350
750
750
-
300
-
-
6
V
V
V
nA
nA
nA
mV
mV
mV
mV
pF
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=400V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=400V, V
BE
=0
I
C
=1mA, I
B
=0.1mA
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
V
CB
=20V, f=1MHz, I
E
=0
Classification of h
FE
2
Rank
Range
N
50-300
SD
70-210
SUM
120-300
GMPSA44S
Page: 1/2
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