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GMPSA27 参数 Datasheet PDF下载

GMPSA27图片预览
型号: GMPSA27
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅达林顿晶体管 [NPN SILICON DARLINGTON TRANSISTOR]
分类和应用: 晶体晶体管达林顿晶体管
文件页数/大小: 2 页 / 231 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMPSA27的Datasheet PDF文件第2页  
G M P S A2 7
Description
CORPORATION
!
NPN SILICO N DARLING TON TRANSISTO R
ISSUED DATE :2004/08/12
REVISED DATE :2004/11/29B
The GMPSA27 is designed for darlington applications requiring extremely high current gain at collector to 500mA.
Package Dimensions
D
E
S1
TO-92
A
S E A T IN G
PLANE
b1
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CES
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
60
60
10
500
625
V
V
V
mA
mW
Unit
Characteristics
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
V
BE(on)
*hFE1
*hFE2
at Ta = 25 :
Min.
60
60
10
-
-
-
-
-
10K
10K
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
500
100
1.5
2
-
-
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
I
C
=100uA ,I
E
=0
I
C
=100uA ,V
BE
=0
I
E
=10uA ,I
C
=0
V
CB
=50V, I
E
= 0
V
CE
=50V
V
EB
=10V, Ic = 0
I
C
=100mA, I
B
=0.1mA
V
CE
=5V ,I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
Pulse Test: Pulse Width 380us, Duty Cycle
2%
1/2