欢迎访问ic37.com |
会员登录 免费注册
发布采购

GMPSA14 参数 Datasheet PDF下载

GMPSA14图片预览
型号: GMPSA14
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅达林顿晶体管 [NPN SILICON DARLINGTON TRANSISTOR]
分类和应用: 晶体晶体管达林顿晶体管
文件页数/大小: 2 页 / 153 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMPSA14的Datasheet PDF文件第2页  
CORPORATION
G M P S A1 4
Description
Features
ISSUED DATE :2004/12/27
REVISED DATE :
NPN SI LI CO N DARLI NG TO N TRANSI STO R
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA.
*High D.C. Current Gain
*Complementary to GMPSA64
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CES
V
EBO
I
C
P
D
Ratings
+150
-55 ~ +150
30
30
10
500
625
V
V
V
mA
mW
Unit
Characteristics
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
at Ta = 25 :
Min.
30
30
10
-
-
-
-
10
20
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
K
K
MHz
pF
Test Conditions
I
C
=100uA, I
E
=0
I
C
=100uA , V
BE
=0
I
E
=10uA , I
C
=0
V
CB
=30V, I
E
= 0
V
EB
=10V, I
C
=0
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
1/2