G M B TA 5 6
Package Dimensions
The GMBTA56 is amplifier applications.
1/2
PNP SILICON TRANSISTOR
Description
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-80
-80
-4
-500
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
VCE(sat)
VBE(on)
HFE1
HFE2
fT
at Ta = 25 :
Min.
-80
-80
-4
-
-
-
-
50
50
100
-
-
MHz
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-250
-1.2
-
Unit
V
V
V
nA
nA
mV
V
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-80V, IE=0
VCE=-60V
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-2V, IC=-10mA, f=1MHz
Test Conditions
GTM [ GTM CORPORATION ]
