CORPORATION
G M BTA1 3
Description
Features
NP N E PITAX I AL S ILI CO N T RANSI STOR
ISSUED DATE :2003/07/15
REVISED DATE :2006/05/09B
The GMBTA13 is designed for Darlington Amplifier Transistor.
*High D.C. Current Gain
*Collector-Emitter Voltage V
CES
=30V
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CES
V
EBO
R
R
JA
JC
Ratings
+150
-55 ~ +150
30
30
10
556
170
500
225
Unit
:
:
V
V
V
: /W
: /W
mA
mW
I
C
P
D
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
5k
10k
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
,unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=100uA ,I
E
=0
-
V
I
C
=100uA ,V
BE
=0
-
V
I
E
=10uA ,I
C
=0
100
nA
V
CB
=30V, I
E
= 0
100
nA
V
EB
=10V, Ic = 0
1.5
V
I
C
=100mA, I
B
=0.1mA
2.0
V
V
CE
=5V, I
C
=100mA
-
V
CE
=5V, I
C
=10mA
-
V
CE
=5V, I
C
=100mA
-
MHz
V
CE
=5V, I
C
=10mA, f=100MHz
6
pF
V
CB
=10V, I
E
=0, f=1MHz
Pulse Test: Pulse Width
380us, Duty Cycle
2%
1/2
GTM [ GTM CORPORATION ]
