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GMBT9012 参数 Datasheet PDF下载

GMBT9012图片预览
型号: GMBT9012
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管外延 [PNP EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 221 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMBT9012的Datasheet PDF文件第2页  
GM BT9012
Description
Package Dimensions
1/2
P N P E PI TA XI A L T RA N SI STO R
The GMBT9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-40
-20
-5
-500
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE1
hFE2
fT
Cob
at Ta = 25 :
Min.
-40
-20
-5
-
-
-
-
-
112
40
100
-
Typ.
-
-
-
-
-
-
-
-
180-
-
-
-
Max.
-
-
-
-100
-100
-0.6
-1.2
-0.9
300
-
-
8
MHz
pF
Unit
V
V
V
nA
nA
V
V
V
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCE=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
Test Conditions
Classification Of HFE1
Rank
hFE
G
112 - 166
H
144 - 202
L
176 - 300