ISSUED DATE :2002/11/21
REVISED DATE :2005/04/08B
GM BT8050
Description
Package Dimensions
NP N E PITAXI AL T RANSI STOR
The GMBT8050 is designed for general purpose amplifier applications.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
,unless otherwise noted)
Max.
-
-
-
1
100
500
1
500
-
10
MHz
pF
Unit
V
V
V
uA
nA
mV
V
I
C
=10uA , I
E
=0
I
C
=1mA ,I
B
=0
I
E
=10uA ,I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5V ,I
C
=0
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=150mA
V
CE
=1V, I
C
=150mA
V
CE
=10V, I
C
=20mA, f=100MHz
V
CB
=10V, f=1MHz
Test Conditions
Ratings
+150
-55~+150
25
20
5
700
225
Unit
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
fT
Cob
Min.
25
20
5
-
-
-
-
120
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
Classification Of h
FE
Rank
h
FE
D9C
120 ~ 200
D9D
150 ~ 300
D9E
250 ~ 500
1/2
GTM [ GTM CORPORATION ]
