ISSUED DATE :2005/06/28
REVISED DATE :
GM BT5087
Description
Package Dimensions
P NP E PITAXI AL P L ANAR T RANS ISTO R
The GMBT5087 is designed for low noise, high gain and general purpose amplifier applications.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
,unless otherwise noted)
Max.
Unit
-
-
-
-10
-50
-300
-850
800
-
-
-
4.0
MHz
pF
V
V
V
nA
nA
mV
mV
I
C
=-100uA , I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA ,I
C
=0
V
CB
=-10V, I
E
=0
V
CB
=-35V, I
E
=0
I
C
=-10mA, I
B
=-1mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-5V, I
C
=-0.1mA
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-0.5mA, f=100MHz
V
CB
=-5V, f=100kHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Ratings
+150
-55~+150
-50
-50
-3
-50
225
Unit
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
1
I
CBO
2
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
-50
-50
-3
-
-
-
-
250
250
250
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Test Conditions
1/2