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GMBT1815 参数 Datasheet PDF下载

GMBT1815图片预览
型号: GMBT1815
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 202 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMBT1815的Datasheet PDF文件第2页  
GM BT1815
Description
Package Dimensions
1/2
NP N E PITAX I AL P L ANAR T RANS ISTO R
The GMBT1815 is Designed for use Driver Stage of AF Amplifier and General Purpose Application.
REF
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
60
50
5
150
250
Unit
V
V
V
mA
mW
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
fT
Cob
at Ta = 25 :
Min.
60
50
5
-
-
-
-
120
25
80
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1.0
700
-
-
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
mV
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=1V, IC=10mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
Test Conditions
Classification of
Rank
Range
hFE1
C4Y
120 - 240
C4G
200 - 400
C4B
350 - 700