ISSUED DATE :2004/12/03
REVISED DATE :
G M A4 2 M
Description
N P N P L A S T I - E N C A P S U L AT E T R A N S I S T O R
T
he GMA42M is designed for application requires for high voltage.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Device Dissipation FR-5 Board(Note1)
Thermal Resistance, Junction to Ambient
Note 1: FR-5=1.0*0.75*0.062in
(1)
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
PD(Derate above 25 : )
R
JA
Ratings
+150
-55 ~ +150
300
300
5.0
500
500
4.0
250
Unit
V
V
V
mA
mW
mW/ :
: /W
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
h
FE
1
h
FE
2
h
FE
3
f
T
at Ta = 25 :
Min.
300
300
5
-
-
-
-
60
80
75
50
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
250
100
200
900
-
250
-
-
MHZ
Unit
V
V
V
nA
nA
mV
mV
IC=100uA
IC=1mA
IE=100uA
VCB=200V
VEB=5V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V,IC=10mA,f=30MHZ
Test Conditions
Classification Of h
FE
2
Rank
h
FE
A
80-100
B1
100-150
B2
150-200
C
200-250
GMA42M
1/2
GTM [ GTM CORPORATION ]
