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GM8550 参数 Datasheet PDF下载

GM8550图片预览
型号: GM8550
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管外延 [PNP EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 226 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM8550的Datasheet PDF文件第2页  
GM8550
Description
Package Dimensions
1/2
P N P E P I TA X I A L T R A N S I S T O R
The GM8550 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
1.50
1.30
2.40
0.89
4.25
1.70
1.50
2.60
1.20
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
1.40
0.35
0.52
1.60
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Symbol
Tj
Tstg
BVCBO
BVCEO
BVEBO
IC
IB
PD
Ratings
+150
-55 ~ +150
-40
-25
-6
-1.5
-0.5
1
V
V
V
A
A
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hfe1
hfe2
hfe3
fT
at Ta = 25 :
Min.
-40
-25
-6
-
-
-
-
45
120
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
MHz
Unit
V
V
V
nA
nA
V
V
V
IC=-100uA
IC=-2mA
IE=-100uA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-20mA, f=100MHz
Test Conditions
Classification Of hFE
Rank
hFE
C
120 - 200
D
160 - 300
E
250 - 500