欢迎访问ic37.com |
会员登录 免费注册
发布采购

GM649A 参数 Datasheet PDF下载

GM649A图片预览
型号: GM649A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 478 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM649A的Datasheet PDF文件第2页  
ISSUED DATE :2005/03/25
REVISED DATE :
GM649A
Description
Package Dimensions
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GM469A is designed for low frequency power amplifier complementary pair with GM669A.
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current(Pulse)
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Ts
TG
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
)
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
MHz
pF
Unit
V
V
V
uA
V
V
+150
-55 ~ +150
-180
-160
-5
-1.5
-3
1
V
V
V
A
A
W
Electrical Characteristics
(T
A
= 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE
(sat)
*V
BE
(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
-180
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
27
Test Conditions
I
C
=-1mA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CB
=-160V, I
E
=0
I
C
=-600mA, I
B
=-50mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-150mA, f=100MHz
VCB=-10V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
Classification Of h
FE
1
Rank
h
FE
1
B
60 ~ 120
C
100 ~ 200
GM649A
1/2