CORPORATION
GM4401
Description
Features
&
Complementary to GM4403
NPN EPITAXIAL PLANAR TRANSISTOR
The GM4401 is designed for general purpose switching and amplifier applications.
ISSUED DATE :2004/12/17
REVISED DATE :
& High Power Dissipation: 1W at 25
& High DC Current Gain: 100-300 at 150mA
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Unit
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
60
40
5
600
1
V
V
V
mA
W
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CE
X
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)1
*V
BE
(sat)2
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
fT
Cob
Rank
Range
at Ta = 25 :
Min.
60
40
5
-
-
-
750
-
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A
100-210
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
B
190-300
MHz
pF
Unit
V
V
V
nA
mV
mV
mV
V
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CE
=35V, V
BE
= 0.4V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
V
CE
=10V, I
C
=20mA, f=100MHz
V
CB
=5V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
4
1/2
GTM [ GTM CORPORATION ]
