ISSUED DATE :2005/12/16
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-20
-
-
V
BVDSS
Tj
VGS=0, ID=-250uA
Ϧ
BVDSS
/Ϧ
-
-0.1
-
-
V/к
V
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.6A
VGS= ±12V
-0.5
-
VGS(th)
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.4
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
±100
nA
uA
uA
IGSS
-
-1
VDS=-20V, VGS=0
VDS=-16V, VGS=0
VGS=-10V, ID=-2.6A
VGS=-4.5V, ID=-2.0A
VGS=-2.5V, ID=-1.0A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-10
-
200
Static Drain-Source On-Resistance2
mꢀ
-
250
RDS(ON)
-
300
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
5.2
1.36
0.6
5.2
9.7
19
29
295
170
65
10
-
Qg
Qgs
Qgd
Td(on)
Tr
ID=-2.8A
VDS=-6V
VGS=-5V
nC
-
-
VDS=-15V
ID=-1A
VGS=-10V
RG=6ꢀ
-
ns
Turn-off Delay Time
Fall Time
-
Td(off)
Tf
RD=15ꢀ
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
Ciss
Coss
Crss
VGS=0V
pF
-
VDS=-6V
f=1.0MHz
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
-1.2
-1
Unit
V
Test Conditions
-
-
-
-
VSD
IS=-1.6A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
A
IS
VD=VG=0V, VS=-1.2V
1
Pulsed Source Current (Body Diode
)
-10
A
ISM
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, t Љ10sec.
GM2501
Page: 2/4
GTM [ GTM CORPORATION ]
