欢迎访问ic37.com |
会员登录 免费注册
发布采购

GM194A 参数 Datasheet PDF下载

GM194A图片预览
型号: GM194A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面中功率晶体管 [NPN SILICON PLANAR MEDIUM POWER TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 343 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM194A的Datasheet PDF文件第2页  
CORPORATION
GM194A
Description
The GM194A is designed for medium power amplifier applications.
ISSUED DATE :2006/06/07
REVISED DATE :
NP N SIL ICON P L ANAR M E DI UM PO WE R T RANS ISTO R
Features
&
Amp continuous current
1
Package Dimensions
&Complementary to GM195A
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-65~+150
40
40
5
1
2
1
Unit
:
:
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Cob
Min.
40
40
5
-
-
-
-
-
-
-
300
300
200
35
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=100uA , I
E
=0
-
V
I
C
=10mA, I
B
=0
-
V
I
E
=100uA ,I
C
=0
100
nA
V
CB
=30V, I
E
=0
100
nA
V
CES
=30V
100
nA
V
EB
=4V, I
C
=0
0.3
V
I
C
=500mA, I
B
=50mA
0.5
V
I
C
=1A, I
B
=100mA
1.1
V
I
C
=1A, I
B
=100mA
1.0
V
V
CE
=5V, I
C
=1A
-
V
CE
=5V, I
C
=1mA
900
V
CE
=5V, I
C
=500mA
-
V
CE
=5V, I
C
=1A
-
V
CE
=5V, I
C
=2A
-
MHz
V
CE
=10V, I
C
=50mA, f=100MHz
10
pF
V
CB
=10V, I
E
=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
Classification Of h
FE2
Rank
Range
P
300 ~ 700
Q
500 ~ 900
GM194A
Page: 1/2