Pb Free Plating Product
CORPORATION
GM161
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/11/03
REVISED DATE :2005/07/21B
BV
DSS
R
DS(ON)
I
D
20V
50m
5.3A
The GM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
Description
Features
&
Capable of 2.5V gate drive !
&Lower on-resistance
&Reliable and Rugged
Applications
&
Notebook PCs
&Cellular and portable phones
&On-board power supplies
&Li-ion battery Systems
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ,V
GS@4.5V
Continuous Drain Current ,V
GS@4.5V
Pulsed Drain Current
Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
1,2
3
3
Symbol
V
DSS
V
GS
Ratings
20
f 12
5.3
4.3
10
2
-55 ~ +150
0.01
Unit
V
V
A
A
A
W
W/
I
D @Ta=25 :
I
D @Ta=70 :
I
DM
P
D@Ta=25 :
Tj, Tstg
Thermal Data
Parameter
3
Symbol
Max.
Ratings
90
Unit
/W
Thermal Resistance Junction-ambient
Rthj-amb
1/4
GTM [ GTM CORPORATION ]
