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GM1616A 参数 Datasheet PDF下载

GM1616A图片预览
型号: GM1616A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 262 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM1616A的Datasheet PDF文件第2页浏览型号GM1616A的Datasheet PDF文件第3页  
CORPORATION
GM1616A
Description
Package Dimensions
NP N E PITAX I AL P L ANAR T RANS ISTO R
ISSUED DATE :2004/08/02
REVISED DATE :
T
he GM1616A is designed for audio frequency power amplifier and medium speed switching.
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings Ta = 25 :
Parameter
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
V
CBO
V
CEO
V
EBO
I
C
I
C
Tj
Ts
TG
P
D
Typ.
-
-
-
-
150
0.9
640
-
-
160
-
0.07
0.95
0.07
G
200-400
Max.
-
-
-
100
100
300
1.2
700
600
-
-
19
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
120
60
6
1
2
+150
-55 ~ +150
750
Test Conditions
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
BE
=60V
V
BE
=6V
l
C
=1A,I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V,I
C
=50mA
V
CE
=2V,I
C
=100mA
V
CE
=2V,I
C
=1A
V
CE
=2V,I
C
=100mA
V
CB
=10V ,I
E
=0,f=1MHz
V
CE
=10V,I
C
=100mA
I
B
1=-I
B
2=10mA
V
BE
(off)=2~-3V
V
V
V
A
A
mW
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)
*V
BE
(sat)
V
BE
(on)
*HFE1
*HFE2
fT
Cob
ton
ts
tf
Rank
Range
at Ta = 25 :
Min.
120
60
6
-
-
-
-
600
135
81
100
-
-
-
-
MHz
pF
uS
uS
uS
L
300-600
Classificaton of hFE1
Y
135-270
*Pulse Test : Pulse Width <=380us, Duty Cycle <=2%
1/3