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GM1426 参数 Datasheet PDF下载

GM1426图片预览
型号: GM1426
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 173 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM1426的Datasheet PDF文件第2页  
CORPORATION
GM1426
Description
PNP EPITAXIAL PLANAR T RANSISTOR
The GM1426 is designed for DC-DC converter.
ISSUED DATE :2006/03/14
REVISED DATE :
Features
&
FE
=160~390 (@V
CE
=-2V, I
C
=-100mA)
h
Package Dimensions
&Low Saturation Voltage V
CE(sat)
=-0.5 (Max.) (@I
C
=-2A, I
B
=-100mA)
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
-20
-20
-6
-3
1.2
Unit
:
:
V
V
V
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
-20
-20
-6
-
-
-
-
160
-
-
Typ.
-
-
-
-
-
-
-0.3
260
240
35
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=-50uA , I
E
=0
-
V
I
C
=-1mA, I
B
=0
-
V
I
E
=-10uA ,I
C
=0
-100
nA
V
CB
=-20V, I
E
=0
-100
nA
V
CES
=-20V
-100
nA
V
EB
=-5V, I
C
=0
-0.5
V
I
C
=-2A, I
B
=-100mA
390
V
CE
=-2V, I
C
=-100mA
-
MHz
V
CE
=-2V, I
C
=-0.5A, f=100MHz
-
pF
V
CB
=-10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
GM1426
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