ISSUED DATE :2003/05/07
REVISED DATE :2004/12/14B
GM1213
Description
Package Dimensions
PNP EPITAXIAL PLANAR TRANSISTOR
T
he GM1213 is designed for using in power amplifier applications or power switching applications.
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Unit
V
V
V
A
A
mW
mW
2
Absolute Maximum Ratings Ta=25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current at
Base current
Collector Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IB
PC(Note 1)
Ratings
+150
-55 ~ +150
-50
-50
-5
-2
-0.4
500
1000
Typ.
-
-
-
-
-
-
120
40
0.1
1.0
0.1
Max.
-0.1
-0.1
-
240
-
-0.5
-1.2
-
-
-
-
-
Unit
uA
uA
V
V
V
MHz
Pf
s
s
s
Characteristics
at Ta = 25 :
Symbol
ICBO
IEBO
V(
BR
)CEO
h
FE
1
h
FE
2
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Min.
-
-
-50
70
20
-
-
-
-
-
-
-
Note 1:Mounted on ceramic substrate (250mm x0.8t)
Test Conditions
VCB=-50V,I
E
=0
VEB=-5V,Ic=0
IC=-10mA,I
B
=0
VCE=-2V,Ic=-0.5A
VCE=-2V,Ic=-2.0A
IC=-1A, IB=-0.05A
IC=-1A, IB=-0.05A
VCE=-2V, IC=-0.5A
VCB=-10V,IE=0, f=1MHz
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Switching time
Fall time
Classification Of h
FE
1
Rank
Range
O
70-140
Y
120-240
GM1213
Page: 1/2
GTM [ GTM CORPORATION ]
