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GLBCP69 参数 Datasheet PDF下载

GLBCP69图片预览
型号: GLBCP69
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延晶体管 [PNP SILICON EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 245 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GLBCP69的Datasheet PDF文件第2页  
CORPORATION
GLBCP69
Description
Features
&
CEO
: -20V
V
Package Dimensions
SOT-223
&I
C
:1A
P NP S ILI CO N EP ITAX I AL T RANS ISTO R
The GLBCP69 is designed for use in low voltage and medium power applications.
ISSUED DATE :2005/07/15
REVISED DATE :
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10 C
0C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
C
13 T YP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-65~+150
-25
-20
-5
-1
1.5
Unit
V
V
V
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Min.
-25
-20
-5
-
-
-
-
50
85
60
-
Typ.
-
-
-
-
-
-
-
-
-
-
60
,unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-1mA, I
B
=0
-
V
I
E
=-10uA ,I
C
=0
-10
uA
V
CB
=-25V, I
E
=0
-10
uA
V
EB
=-5V, I
C
=0
-500
mV
I
C
=-1A, I
B
=-100mA
-1.0
V
V
CE
=-1V, I
C
=-1A
V
CE
=-10V, I
C
=-5mA
375
V
CE
=-1V, I
C
=-500mA
V
CE
=-1V, I
C
=-1A
-
MHz
V
CE
=-5V, I
C
=-10mA
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
1/2