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GLBCP56 参数 Datasheet PDF下载

GLBCP56图片预览
型号: GLBCP56
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管 [NPN EPITAXIAL SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 151 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GLBCP56的Datasheet PDF文件第2页  
ISSUED DATE :2002/11/20
REVISED DATE :2006/01/02D
GLBCP56
Description
N P N S I L I C O N E P I TA X I A L T R A N S I S T O R
The GLBCP56 is designed for use in audio amplifiers and medium power amplifications.
Features
&
Collector-Emitter Voltage: V
CEO
=80V
Package Dimensions
&Complementary to GLBCX53
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°
TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Ts
TG
V
CBO
V
CEO
V
EBO
I
C
P
D
+150
-65 ~ +150
100
80
5
1
1.5
:
:
V
V
V
A
W
Electrical Characteristics
(Ta = 25 : )
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)1
*V
BE
(on)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Min.
100
80
5
-
-
-
-
63
63
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1000
-
250
-
-
MHz
Unit
V
V
V
nA
nA
mV
mV
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=500mA, I
B
=50mA
I
C
=500mA, V
CE
=2V,
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
V
CE
=5V, I
C
=10mA
* Pulse Test: Pulse Width
16
100 - 250
380 s, Duty Cycle 2%
Test Conditions
Classification Of h
FE
2
Rank
Range
10
63 - 160
GLBCP56
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