Pb Free Plating Product
ISSUED DATE :2005/09/14
REVISED DATE :
G L A2 N 7 0
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
675V
10
0.2A
Description
The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Features
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
C
13 T YP.
2.30 REF.
6.30
6.70
6.70
6.30
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@5V
Continuous Drain Current, V
GS
@5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AR
E
AR
Tj, Tstg
Ratings
675
f 30
0.2
0.13
0.5
1.13
0.01
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
110
Unit
/W
GLA2N70
Page: 1/5
GTM [ GTM CORPORATION ]
