CORPORATION
GL949
Description
ISSUED DATE :2006/11/20
REVISED DATE :
PNP SI L I CO N PL AN AR HI G H C URRE NT T RANSI ST O R
The GL949 is designed for general purpose switching and amplifier applications.
Features
&
6Amps continuous current, up to 20Amps pulse current
Package Dimensions
&Very low saturation voltages
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°
TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Ratings
+150
-55~+150
-50
-30
-6
-5.5
-20
3
Unit
:
:
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics
(Ta = 25 :
Symbol
Min.
-50
-50
-30
-6
-
-
-
-
-
-
-
-
-
100
100
75
-
-
-
, unless otherwise stated)
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
35
100
122
Max.
-
-
-
-
-50
-50
-10
-75
-140
-270
-440
-1.25
-1.06
-
300
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
Test Conditions
I
C
=-100uA , I
E
=0
I
C
=-1uA, RB 1k
I
C
=-10mA, I
B
=0
I
E
=-100uA ,I
C
=0
V
CB
=-40V, I
E
=0
V
CB
=-40V, R 1k
V
EB
=-6V, I
C
=0
I
C
=-500mA, I
B
=-20mA
I
C
=-1A, I
B
=-20mA
I
C
=-2A, I
B
=-200mA
I
C
=-5.5A, I
B
=-500mA
I
C
=-5.5A, I
B
=-500mA
V
CE
=-1V, I
C
=-5.5A
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-5A
V
CE
=-2V, I
C
=-20A
V
CE
=-10V, I
C
=-100mA, f=50MHz
V
CB
=-10V, I
E
=0, f=1MHz
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
CE(sat)
4
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Cob
MHz
pF
GL949
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