CORPORATION
GL194
Description
Features
&
Volt V
CEO
60
ISSUED DATE :2005/10/06
REVISED DATE :
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
The GL194 is designed for medium power amplifier applications.
Package Dimensions
&1 Amp continuous current
&Complementary to GL195
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°
TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
Ratings
+150
-55~+150
80
60
5
1
2
200
2
Unit
:
:
V
V
V
A
A
mA
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Cob
Min.
80
60
5
-
-
-
-
-
-
-
100
100
80
30
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=100uA , I
E
=0
-
V
I
C
=10mA, I
B
=0
-
V
I
E
=100uA ,I
C
=0
100
nA
V
CB
=60V, I
E
=0
100
nA
V
CES
=60V
100
nA
V
EB
=4V, I
C
=0
0.25
V
I
C
=500mA, I
B
=50mA
0.5
V
I
C
=1A, I
B
=100mA
1.1
V
I
C
=1A, I
B
=100mA
1.0
V
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=1mA
300
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
-
MHz
V
CE
=10V, I
C
=50mA, f=100MHz
10
pF
V
CB
=10V, I
E
=0, f=1MHz
2%
*Measured under pulse condition. Pulse width=300 s, Duty Cycle
GL194
Page: 1/2
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