CORPORATION
GL156
Description
Features
&
Volt V
CEO
60
&
3 Amp
ISSUED DATE :2004/12/29
REVISED DATE :2005/08/02B
NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
The GL156 is designed for general purpose switching and amplifier applications.
Package Dimensions
continuous current
&
Low saturation voltage
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10 C
0C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
C
13 T YP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)
*V
BE
(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
ton
toff
Cob
Min.
80
60
5
-
-
-
-
-
-
70
100
80
40
140
-
-
-
Typ.
-
-
-
-
-
0.12
0.43
0.9
0.8
200
200
170
80
175
45
800
-
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
80
60
5
3
6
2
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
,unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=100uA, I
E
=0
-
V
I
C
=10mA, I
B
=0
-
V
I
E
=100uA, I
C
=0
100
nA
V
CB
=60V, I
E
=0
100
nA
V
EB
=4V, I
C
=0
0.3
V
I
C
=1A, I
B
=0.1A
0.6
V
I
C
=3A, I
B
=0.3A
1.25
V
I
C
=1A, I
B
=0.1A
1.0
V
I
C
=1A, V
CE
=2V
-
V
CE
=2V, I
C
=50mA
300
V
CE
=2V, I
C
=500mA
-
V
CE
=2V, I
C
=1A
-
V
CE
=2V, I
C
=2A
-
MHz
V
CE
=5V, I
C
=100mA, f=100MHz
-
ns
V
CC
=10V, I
C
=500mA, I
B
1
=I
B
2
=50mA
-
30
pF
V
CB
=10V, f=1MHz
2%
*Measured under pulse condition. Pulse width 300 s, Duty Cycle
Spice parameter data is available upon request for this device.
1/2
GTM [ GTM CORPORATION ]
