ISSUED DATE :2003/10/22
REVISED DATE :2005/01/13B
GJSD1804
Description
Features
NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R
The GJSD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current
switching applications.
*Low collector-to-emitter saturation voltage
*High current and high f
T
*Excellent linearity of h
FE
*Fast switching time
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Collector Dissipation
(Ta = 25 : , unless otherwise specified)
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
Tc=25 :
unless otherwise specified)
Max.
-
-
-
1
1
0.4
1.3
400
-
-
-
-
-
MHZ
ns
ns
pF
Unit
V
V
V
uA
uA
V
V
Ratings
+150
-55 ~ +150
60
50
6
8
12
1
20
Unit
:
:
V
V
V
A
A
W
W
Electrical Characteristics
(Ta = 25 :
Symbol
V
(BR)
CBO
V
(BR)
CEO
V
(BR)
EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
h
FE
1
h
FE
2
fT
tstg
tf
Cob
Min.
60
50
6
-
-
-
-
70
35
-
-
-
-
Typ.
-
-
-
-
-
0.2
0.95
-
-
180
500
20
65
Test Conditions
IC=10uA, IE=0
IC=1mA, R
BE
=
IE=10uA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
IC=4A, IB=0.2A
IC=4A, IB=0.2A
VCE=2V, IC=0.5A
VCE=2V, IC=6A
VCE=5V,IC=1A
See test circuit
See test circuit
VCB=10V, f=1MHz
GJSD1804
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GTM [ GTM CORPORATION ]
