ISSUED DATE :2004/12/21
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
40
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.032
-
30
-
-
-
-
-
18
6
12
9
110
23
10
1500
250
180
Max.
-
-
3.0
-
±100
1
25
16
25
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
GS
= ±20V
V
DS
=40V, V
GS
=0
V
DS
=32V, V
GS
=0
I
D
=20A, V
GS
=10V
I
D
=18A, V
GS
=4.5V
I
D
=20A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=20A
V
GS
=10V
R
G
=3.3
R
D
=1
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150
: )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
22
27.4
Max.
1.3
-
-
Unit
V
ns
nC
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=20A, V
GS
=0V
dI/dt=100A/ s
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ9960
Page: 2/4
GTM [ GTM CORPORATION ]
