ISSUED DATE :2005/11/03
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-40
-
-0.03
-
-
V
BVDSS
Tj
VGS=0, ID=-250uA
Ϧ
BVDSS
/Ϧ
-
-
V/к
V
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-10V, ID=-12A
VGS= ±25V
-1.0
-3.0
VGS(th)
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
±100
nA
uA
uA
IGSS
-
-1
-25
40
60
30
-
VDS=-40V, VGS=0
VDS=-32V, VGS=0
VGS=-10V, ID=-16A
VGS=-4.5V, ID=-12A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
Static Drain-Source On-Resistance2
mꢀ
RDS(ON)
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
19
4
Qg
Qgs
Qgd
Td(on)
Tr
ID=-12A
nC
VDS=-32V
VGS=-4.5V
9
-
10
37
52
80
-
VDS=-20V
ID=-12A
-
ns
VGS=-10V
Turn-off Delay Time
Fall Time
-
Td(off)
Tf
RG=3.3ꢀ
RD=1.6ꢀ
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1460 2340
Ciss
Coss
Crss
VGS=0V
pF
230
180
-
-
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
-1.2
VSD
IS=-12A, VGS=0V
Reverse Recovery Time2
Trr
-
-
40
54
-
-
ns
IS=-12A, VGS=0V
dI/dt=100A/ꢁs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GJ9563
Page: 2/4
GTM [ GTM CORPORATION ]
