ISSUED DATE :2005/07/15
REVISED DATE :
GJ4672
Description
NPN EPITAXIAL SILICON TRANSISTOR
The GJ4672 is designed for low frequency amplifier applications.
Features
&
saturation voltage, typically V
CE
(sat) =0.1V at I
C
/I
B
=1A/50mA
Low
Package Dimensions
&
Excellent
DC current gain characteristics
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse PW=10ms)
Total Device Dissipation (T
A
=25 : )
Total Device Dissipation (T
C
=25 : )
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
P
D
T
J
T
stg
Ratings
60
50
6
2
5
1.5
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
60
50
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.1
-
210
25
Max.
-
-
-
100
100
0.35
400
-
-
MHz
pF
Unit
V
V
V
nA
nA
V
I
C
=50uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50uA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
E
=500mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
Classification Of h
FE
Rank
Range
A
120 ~ 240
B
200 ~ 400
GJ4672
Page: 1/2
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