ISSUED DATE :2006/08/16
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
25
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
1.0
-
0.026
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VGS= ±20V
3.0
VGS(th)
gfs
Forward Transconductance
25
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
-
-
1
25
9
13
-
VDS=25V, VGS=0
VDS=20V, VGS=0
VGS=10V, ID=30A
VGS=4.5V, ID=30A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
6
Static Drain-Source On-Resistance3
mꢀ
RDS(ON)
-
10
15
4
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
-
Qg
Qgs
Qgd
Td(on)
Tr
ID=20A
nC
-
-
VDS=20V
VGS=4.5V
-
6
-
-
8.8
57.5
18.5
6.4
1135
200
135
-
VDS=15V
ID=20A
-
-
ns
VGS=10V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢀ
RD=0.75ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=25V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
1.5
Unit
V
Test Conditions
-
-
-
VSD
IS=20A, VGS=0V
Continuous Source Current (Body Diode
)
-
50
A
IS
VD= VG=0V, VS=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=20V, L=0.1mH, RG=25ꢀ, IAS=10A.
3. Pulse widthЉ300us, duty cycleЉ2%.
GJ45N03
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GTM [ GTM CORPORATION ]
