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GJ41C 参数 Datasheet PDF下载

GJ41C图片预览
型号: GJ41C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 134 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GJ41C的Datasheet PDF文件第2页  
ISSUED DATE :2005/05/12
REVISED DATE :
GJ41C
Description
Features
NP N EP ITAXI AL PL ANAR T RANSI STOR
The GJ41C is designed for use in general purpose amplifier and switching applications.
*Complementary to GJ42C
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
(DC)
Collector Current (
Pulse)
Junction Temperature
Storage Temperature
Total Power Dissipation
, unless otherwise specified)
Symbol
Ratings
V
CBO
100
V
CEO
100
V
EBO
5
I
C
6
I
C
10
Tj
+150
Ts
TG
-55 ~ +150
P
D
2
20
P
D
(T
C
=25 : )
Unit
V
V
V
A
A
:
:
W
W
Electrical Characteristics
(Rating at Ta=25 : )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
fT
100
100
5
-
-
-
-
-
30
15
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
50
500
1.5
2.0
-
75
-
V
V
V
uA
uA
uA
V
V
MHz
I
C
=1mA, I
E
=0
I
C
=30mA, I
B
=0
I
E
=1mA, I
C
=0
V
CE
=100V, V
EB
=0V
V
CE
=60V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=6A, I
B
=600mA
V
CE
=4V, I
C
=6A
V
CE
=4V, I
C
=300mA
V
CE
=4V, I
C
=3A
V
CE
=10V, I
C
=500mA, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
GJ41C
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