欢迎访问ic37.com |
会员登录 免费注册
发布采购

GJ31C 参数 Datasheet PDF下载

GJ31C图片预览
型号: GJ31C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 132 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GJ31C的Datasheet PDF文件第2页  
ISSUED DATE :2005/05/12
REVISED DATE :
GJ31C
Description
Features
NP N EP ITAXI AL PL ANAR T RANSI STOR
The GJ31C is designed for use in general purpose amplifier and switching applications.
*Complementary to GJ32C
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
(DC)
Collector Current (
Pulse)
Junction Temperature
Storage Temperature
Total Power Dissipation
, unless otherwise specified)
Symbol
Ratings
V
CBO
100
V
CEO
100
V
EBO
5
I
C
3
I
C
5
Tj
+150
Ts
TG
-55 ~ +150
P
D
2
15
P
D
(T
C
=25 : )
Unit
V
V
V
A
A
:
:
W
W
Electrical Characteristics
(Rating at Ta=25 : )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
fT
100
100
5
-
-
-
-
-
25
10
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
50
1
1.2
1.8
-
50
-
V
V
V
uA
uA
mA
V
V
MHz
I
C
=1mA, I
E
=0
I
C
=30mA, I
B
=0
I
E
=100uA, I
C
=0
V
CE
=100V, V
EB
=0V
V
CE
=60V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=3A, I
B
=375mA
V
CE
=4V, I
C
=3A
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=3A
V
CE
=10V, I
C
=500mA, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
GJ31C
Page: 1/2