ISSUED DATE :2005/09/26
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
80
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.07
-
20
-
-
-
-
-
18
5
11
11
20
29
30
1810
135
96
1.6
Max.
-
-
3.0
-
D
100
10
100
45
55
30
-
-
-
-
-
-
2900
-
-
-
Ł
pF
ns
nC
Unit
V
V/ :
V
S
nA
uA
uA
mŁ
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
25V
V
GS
= D
V
DS
=80V, V
GS
=0
V
DS
=64V, V
GS
=0
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=8A
I
D
=12A
V
DS
=64V
V
GS
=4.5V
V
DS
=40V
I
D
=12A
V
GS
=10V
R
G
=3.3 Ł
R
D
=3.3 Ł
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
57
140
Max.
1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=20A, V
GS
=0V
I
S
=12A, V
GS
=0V
dI/dt=100A/ s
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
G
I
9980
Page: 2/4
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